?2010 fairchild semiconductor corporation 1 www.fairchildsemi.com FGP5N60LS rev. c0 FGP5N60LS 600 v, 5 a field stop igbt february 2010 absolute maximum ratings symbol description ratings unit v ces collector to emitter voltage 600 v v ges gate to emitter voltage ?20 v i c collector current @ t c = 25 o c 10 a collector current @ t c = 100 o c 5 a i cm (1) pulsed collector current @ t c = 25 o c 36 a p d maximum power dissipation @ t c = 25 o c 83 w maximum power dissipation @ t c = 100 o c 33 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c notes: 1: repetitive test , pulse width = 100 usec , duty = 0.2, v ge = 13.5 v thermal characteristics symbol parameter typ. max. unit r ? jc thermal resistance, junction to case - 1.5 o c/ w r ? ja thermal resistance, junction to ambient - 62.5 o c/ w FGP5N60LS 600 v, 5 a field stop igbt features ? high current capability ? low saturation voltage: v ce(sat) =1.7 v @ i c = 5 a ? high input impedance ? rohs compliant applications ? hid ballast general description g c e to-220 g c e using novel field stop igbt technology, fairchild ? ?s new series of field stop igbts offer the optimum performance for hid bal - last where low conduction losses are essential.
?2010 fairchild semiconductor corporation 2 www.fairchildsemi.com FGP5N60LS rev. c0 FGP5N60LS 600 v, 5 a field stop igbt package marking and ordering information device marking device package packaging type qty per tube max qty per box FGP5N60LS FGP5N60LS tt220 tube 50ea - electrical characteristics of the igbt t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0 v, i c = 250 ?a 600 - - v ?bv ces ?t j temperature coefficient of breakdown voltage v ge = 0 v, i c = 250 ?a - 0.8 - v/ o c i ces collector cut-off current v ce = v ces , v ge = 0 v - - 250 ?a i ges g-e leakage current v ge = v ges , v ce = 0 v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 250 ?a, v ce = v ge 2.7 3.9 4.5 v v ce(sat) collector to emitter saturation voltage i c = 5 a , v ge = 15 v - 1.7 2.1 v i c = 5 a , v ge = 15 v, t c = 125 o c - 1.8 - v collector to emitter saturation voltage i c = 14 a , v ge = 12 v - 2.7 3.2 v i c = 14 a , v ge = 12 v, t c = 125 o c - 3.1 - v dynamic characteristics c ies input capacitance v ce = 30 v , v ge = 0 v, f = 1 mhz - 278 - pf c oes output capacitance - 28 - pf c res reverse transfer capacitance - 11 - pf switching characteristics t d(on) turn-on delay time v cc = 400 v, i c = 5 a, r g = 10?? , v ge = 15 v, inductive load, t c = 25 o c - 4.3 - ns t r rise time - 1.6 - ns t d(off) turn-off delay time - 36 - ns t f fall time - 118 - ns e on turn-on switching loss - 38 - ?j e off turn-off switching loss - 130 - ?j e ts total switching loss - 168 - ?j t d(on) turn-on delay time v cc = 400 v, i c = 5 a, r g = 10 ? , v ge = 15 v, inductive load, t c = 125 o c - 4.1 - ns t r rise time - 1.8 - ns t d(off) turn-off delay time - 37 - ns t f fall time - 150 - ns e on turn-on switching loss - 80 - ?j e off turn-off switching loss - 168 - ?j e ts total switching loss - 248 - ?j q g total gate charge v ce = 400 v, i c = 5 a, v ge = 15 v - 18.3 - nc q ge gate to emitter charge - 1.6 - nc q gc gate to collector charge - 7.9 - nc
?2010 fairchild semiconductor corporation 3 www.fairchildsemi.com FGP5N60LS rev. c0 FGP5N60LS 600 v, 5 a field stop igbt typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current level
?2010 fairchild semiconductor corporation 4 www.fairchildsemi.com FGP5N60LS rev. c0 FGP5N60LS 600 v, 5 a field stop igbt typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. saturation voltage vs. v ge figure 9. capacitance characteristics figure 10. gate charge characteristics figure 11. soa characteristics figure 12. turn-on characteristics vs. gate resistance
?2010 fairchild semiconductor corporation 5 www.fairchildsemi.com FGP5N60LS rev. c0 FGP5N60LS 600 v, 5 a field stop igbt typical performance characteristics figure 13. turn-off characteristics vs. figure 14. turn-on characteristics vs. gate resistance collector current figure 15. turn-off characteristics vs. figure 16. switching loss vs. gate resistance collector current figure 17. switching loss vs. collector current figure 18. turn off switching soa characteristics
?2010 fairchild semiconductor corporation 6 www.fairchildsemi.com FGP5N60LS rev. c0 FGP5N60LS 600 v, 5 a field stop igbt typical performance characteristics figure 19.transient thermal impedance of igbt t 1 p dm t 2
?2010 fairchild semiconductor corporation 7 www.fairchildsemi.com FGP5N60LS rev. c0 FGP5N60LS 600 v, 5 a field stop igbt mechanical dimensions to-220
FGP5N60LS 600 v, 5 a field stop igbt FGP5N60LS rev. c0 www.fairchildsemi.com 8 ?2010 fairchild semiconductor corporation trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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